IAM-82028 silicon bipolar mmic 5 ghz active double balanced mixer/if amp technical data features ? 15 db rf-if conversion gain from 0.05 - 5 ghz ? if output from dc to 2 ghz ? if output p ldb up to +12 dbm ? single polarity bias supply: v cc = 7 to 13 v ? load-insensitive performance ? conversion gain flat over temperature ? low lo power requirements: 0 dbm typical ? low rf to if feedthrough, low lo leakage ? hermetic ceramic surface mount package description the IAM-82028 is a complete moderate-power double-balanced active mixer housed in a miniature ceramic hermetic surface mount package. it is designed for narrow or wide bandwidth commercial, industrial and military applications having rf inputs up to 5 ghz and if outputs from dc to 2 ghz. operation at rf and lo frequencies less than 50 mhz can be achieved using optional external capacitors to ground. the IAM-82028 is particularly well suited for applications that require load-insensitive conversion gain and good spurious signal suppression and moderate dynamic range with minimum lo power. typical applications include frequency downconversion, modulation, demodulation and phase detection for fiber-optic, gps satellite navigation, mobile radio, and communications receivers. the iam series of gilbert multiplier-based frequency converters is fabricated using agilents 10 ghz f t , 25 ghz f max isosat tm -i silicon bipolar process which uses nitride self-alignment, submicrometer lithography, trench isolation, ion implantation, gold metallization and polyimide inter-metal dielectric and scratch protection to achieve excellent performance, uniformity and reliability. 28 package typical biasing configuration and functional block diagram pin 1
2 absolute maximum ratings absolute parameter maximum [1] device voltage 15 v power dissipation [2,3] 1200 mw rf input power +14 dbm lo input power +14 dbm junction temperature 200 c storage temperature -65 c to 200 c thermal resistance: [2,4] q jc = 45 c/w notes: 1. permanent damage may occur if any of these limits are exceeded. 2. t case = 25 c. 3. derate at 22.2 mw/ c for t c >146 c. 4. see measurements section "thermal resistance in communications components catalog, for more information. IAM-82028 electrical specifications [1] , t a = 25 c parameters and test conditions [2] : symbol v cc = 10 v, v ee = 0 v, v gc = 0 v, z o = 50 w units min. typ. max. g c conversion gain rf = 2 ghz, lo = 1.75 ghz db 13.5 15 16.5 f 3db rf rf bandwidth if = 250 mhzz ghz 5.5 (g c 3 db down) f 3db if if bandwidth lo = 2 gh ghz 0.6 (g c 3 db down) p 1db if output power at rf = 2 ghz, lo = 1.75 ghz dbm 8 1 db gain compression ip 3 if output third rf = 2 ghz, lo = 1.75 ghz dbm 18 order intercept point nf ssb noise figure rf = 2 ghz, lo = 1.75 ghz db 16 vswr rf port vswr f = 0.05 to 5 ghz 1.5:1 lo port vswr f = 0.05 to 5 ghz 2:1 if port vswr f < 2 ghz 2.3:1 rf if rf feedthrough at if port rf = 2 ghz, lo = 1.75 ghz dbc -30 lo if lo leakage at if port lo = 1.75 ghz dbm -20 lo rf lo leakage at rf port lo = 1.75 ghz dbm -30 i cc supply current ma 40 55 65 note: 1. the recommended operating voltage range for this device is 7 to 13 v. typical performance as a function of voltage is on the following page.
3 typical performance, t a = 25 c, v cc = 10 v rf: -20 dbm at 2 ghz, lo: 0 dbm at 1.75 ghz (unless otherwise noted) 0 5 10 15 20 0 04 8121620 50 25 75 100 if p 1 db (dbm) 0 5 10 15 20 g c (db) i cc (ma) v cc (v) figure 1. conversion gain, if p 1 db and i cc current vs. v cc bias voltage. i cc g c p 1 db 0 5 10 15 20 ? 15 40 ?5 ?5 +25 +85 +125 50 70 60 80 if p 1 db (dbm) g c (db) i cc (ma) temperature ( c) figure 2. conversion gain, if p 1 db and i cc current vs. case temperature. g c p 1 db i cc 0 5 15 10 20 g c (db) 0.1 0.2 0.5 1.0 2.0 5.0 10 rf frequency (ghz) figure 3. typical rf to if conversion gain vs. rf frequency, t a = 25 c (low side lo). 1:1 2:1 3:1 4:1 vswr 0.1 1.0 10 frequency (ghz) figure 4. rf, lo and if port vswr vs. frequency. 10 12 14 16 g c (db) ?0 0 5 ? 10 lo power (dbm) figure 5. rf to if conversion gain vs. lo power. if = 70 mhz if = 1 ghz rf lo if ?0 ?0 ?0 ?0 0 rf to if (dbc) lo to rf and if (dbm) 0.1 1.0 10 frequency (ghz) figure 7. rf feedthrough relative to if carrier, dbm lo to rf and if leakage vs. frequency. 0.01 0.1 1.0 4.0 2.0 frequency, rf?o (ghz) figure 6. rf to if conversion gain vs. if frequency. 0 5 10 15 20 g c (db) 012345 harmonic rf order xmn = pif ?p(m * rf ?n * lo) figure 8. harmonic intermodulation suppression (db below desired output) rf at 1 ghz, lo at 0.752 ghz, if at 0.248 ghz. 12 6 27 22 41 23 0 35 18 38 36 40 52 43 59 52 73 >75 60 >75 74 >75 74 >75 >75 >75 >75 >75 >75 >75 >75 >75 >75 >75 >75 0 1 2 3 4 5 harmonic lo order high side lo low side lo rf to if lo to if lo to rf 0 5 10 lo = 2 ghz lo = 4 ghz high side lo low side lo
www.semiconductor.agilent.com data subject to change. copyright ? 1999 agilent technologies 5965-9114e (11/99) 4.57 0.13 (0.180 0.005 sq) 5.33 0.25 (0.210 0.010) 2.54 0.25 (0.100 0.010) 10.16 0.25 (0.400 0.010) end view top view 0.13 0.05 (0.005 0.002) 8 max. 1.78 0.25 (0.070 0.010) 0.76 0.13 (0.030 0.005) 0.08 0.08 (0.003 0.003) 0.38 0.08 (0.015 0.003) 1.27 (0.050) typ. 1 2 3 4 8 7 6 5 2.08 0.25 (0.082 0.010) side view dimensions are in millimeters (inches) m820 package dimensions 28 package
|
